3.7GHz GaN Bare Die(90W)

製品名

3.7GHz GaN Bare Die(90W)

3.7GHz GaN Bare Die(90W)

型番

GD090

メーカ

Gallium Semiconductor

製品概要

The GD090 is a 110W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.7GHz on a 50V supply rail. The wide bandwidth of the GD090 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.

特長

• Frequency: DC-3.7GHz
• Output Power: 110W(max)
• Linear Gain: 21.6dB
• Efficiency: 67%
• Voltage: 50V

FEATURES

• Frequency: DC-3.7GHz
• Output Power: 110W(max)
• Linear Gain: 21.6dB
• Efficiency: 67%
• Voltage: 50V