2.9GHz GaN Bare Die(250W)

製品名

2.9GHz GaN Bare Die(250W)

2.9GHz GaN Bare Die(250W)

型番

GD250

メーカ

Gallium Semiconductor

製品概要

The GD250 is a 250W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 2.9 GHz on a 50V supply rail. The wide bandwidth of the GD250 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.

特長

• Frequency: DC-2.9GHz
• Output Power: 250W(max)
• Linear Gain: 18.6dB
• Efficiency: 66%
• Voltage: 50V

FEATURES

• Frequency: DC-2.9GHz
• Output Power: 250W(max)
• Linear Gain: 18.6dB
• Efficiency: 66%
• Voltage: 50V