2.9GHz GaN Bare Die(300W)

製品名

2.9GHz GaN Bare Die(300W)

2.9GHz GaN Bare Die(300W)

型番

GD300

メーカ

Gallium Semiconductor

製品概要

The GD300 is a 300W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 2.9 GHz on a 50V supply rail. The wide bandwidth of the GD300 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.

特長

• Frequency: DC-2.9GHz
• Output Power: 300W(max)
• Linear Gain: 18dB
• Efficiency: 65%
• Voltage: 50V

FEATURES

• Frequency: DC-2.9GHz
• Output Power: 300W(max)
• Linear Gain: 18dB
• Efficiency: 65%
• Voltage: 50V