2.9GHz GaN Bare Die(300W)

2.9GHz GaN Bare Die(300W)

製品名
2.9GHz GaN Bare Die(300W)
2.9GHz GaN Bare Die(300W)
型番
GD300
メーカ
Gallium Semiconductor

製品概要

The GD300 is a 300W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 2.9 GHz on a 50V supply rail. The wide bandwidth of the GD300 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.

特長

  • Frequency: DC-2.9GHz
  • Output Power: 300W(max)
  • Linear Gain: 18dB
  • Efficiency: 65%
  • Voltage: 50V

FEATURES

  • Frequency: DC-2.9GHz
  • Output Power: 300W(max)
  • Linear Gain: 18dB
  • Efficiency: 65%
  • Voltage: 50V