8GHz Discrete Unmatched GaN Transistor(15W)

8GHz Discrete Unmatched GaN Transistor(15W)

製品名
8GHz Discrete Unmatched GaN Transistor(15W)
Discrete Pre-matched 8GHz GaN Transistor(15W)
型番
GT010D
メーカ
Gallium Semiconductor

製品概要

The GT010D is a 15W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 8.0GHz on a 50V supply rail. The wide bandwidth of the GT010D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.

特長

  • Frequency: DC-8GHz
  • Output Power: 15W(max)
  • Linear Gain: 19.8dB
  • Efficiency: 61%
  • Voltage: 50V

FEATURES

  • Frequency: DC-8GHz
  • Output Power: 15W(max)
  • Linear Gain: 19.8dB
  • Efficiency: 61%
  • Voltage: 50V