6GHz Discrete Unmatched GaN Transistor(50W)

6GHz Discrete Unmatched GaN Transistor(50W)

製品名
6GHz Discrete Unmatched GaN Transistor(50W)
Discrete Pre-matched 6GHz GaN Transistor(50W)
型番
GT030D
メーカ
Gallium Semiconductor

製品概要

The GT030D is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GT030D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations.

特長

  • Frequency: DC-6GHz
  • Output Power: 50W(max)
  • Linear Gain: 21.2dB
  • Efficiency: 64%
  • Voltage: 50V

FEATURES

  • Frequency: DC-6GHz
  • Output Power: 50W(max)
  • Linear Gain: 21.2dB
  • Efficiency: 64%
  • Voltage: 50V