3.7GHz Discrete Unmatched GaN Transistor(110W)

3.7GHz Discrete Unmatched GaN Transistor(110W)

製品名
3.7GHz Discrete Unmatched GaN Transistor(110W)
Discrete Pre-matched 3.7GHz GaN Transistor(110W)
型番
GT090D
メーカ
Gallium Semiconductor

製品概要

The GT090D is a 110W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.7GHz on a 50V supply rail. The wide bandwidth of the GT090D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations.

特長

  • Frequency: DC-3.7GHz
  • Output Power: 110W(max)
  • Linear Gain: 21.6dB
  • Efficiency: 67%
  • Voltage: 50V

FEATURES

  • Frequency: DC-3.7GHz
  • Output Power: 110W(max)
  • Linear Gain: 21.6dB
  • Efficiency: 67%
  • Voltage: 50V