2.9GHz Discrete Unmatched GaN Transistor(220W)

製品名

2.9GHz Discrete Unmatched GaN Transistor(220W)

Discrete Pre-matched 2.9GHz GaN Transistor(220W)

型番

GTH0-0029220S

メーカ

Gallium Semiconductor

製品概要

The GTH0-0029220S is a 220W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 2.9GHz on a 50V supply rail. The wide bandwidth of the GTH0-0029220S makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.

特長

• Frequency: DC-2.9GHz
• Output Power: 220W(max)
• Linear Gain: 20.7dB
• Efficiency: 67%
• Voltage: 50V

FEATURES

• Frequency: DC-2.9GHz
• Output Power: 220W(max)
• Linear Gain: 20.7dB
• Efficiency: 67%
• Voltage: 50V