3.2GHz GaN Bare Die(160W)

製品名

3.2GHz GaN Bare Die(160W)

3.2GHz GaN Bare Die(160W)

型番

GD160

メーカ

Gallium Semiconductor

製品概要

The GD160 is a 160W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.2GHz on a 50V supply rail. The wide bandwidth of the GD160 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.

特長

• Frequency: DC-3.2GHz
• Output Power: 160W(max)
• Linear Gain: 18.5dB
• Efficiency: 65%
• Voltage: 50V

FEATURES

• Frequency: DC-3.2GHz
• Output Power: 160W(max)
• Linear Gain: 18.5dB
• Efficiency: 65%
• Voltage: 50V