3.2GHz Discrete Unmatched GaN Transistor(150W)

製品名

3.2GHz Discrete Unmatched GaN Transistor(150W)

Discrete Pre-matched 3.2GHz GaN Transistor(150W)

型番

GT135D

メーカ

Gallium Semiconductor

製品概要

The GT135D is a 150W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.2GHz on a 50V supply rail. The wide bandwidth of the GT135D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations.

特長

• Frequency: DC-3.2GHz
• Output Power: 150W(max)
• Linear Gain: 18.8dB
• Efficiency: 66%
• Voltage: 50V

FEATURES

• Frequency: DC-3.2GHz
• Output Power: 150W(max)
• Linear Gain: 18.8dB
• Efficiency: 66%
• Voltage: 50V