3.2GHz GaN Bare Die(200W)

製品名

3.2GHz GaN Bare Die(200W)

3.2GHz GaN Bare Die(200W)

型番

GD200

メーカ

Gallium Semiconductor

製品概要

The GD200 is a 200W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.2 GHz on a 50V supply rail. The wide bandwidth of the GD200 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.

特長

• Frequency: DC-3.2GHz
• Output Power: 200W(max)
• Linear Gain: 18.4dB
• Efficiency: 64%
• Voltage: 50V

FEATURES

• Frequency: DC-3.2GHz
• Output Power: 200W(max)
• Linear Gain: 18.4dB
• Efficiency: 64%
• Voltage: 50V