2.9GHz Discrete Unmatched GaN Transistor(220W)
- 製品名
- 2.9GHz Discrete Unmatched GaN Transistor(220W)
- Discrete Pre-matched 2.9GHz GaN Transistor(220W)
- 型番
- GTH0-0029220S
- メーカ
- Gallium Semiconductor
製品概要
The GTH0-0029220S is a 220W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 2.9GHz on a 50V supply rail. The wide bandwidth of the GTH0-0029220S makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.
特長
- Frequency: DC-2.9GHz
- Output Power: 220W(max)
- Linear Gain: 20.7dB
- Efficiency: 67%
- Voltage: 50V
FEATURES
- Frequency: DC-2.9GHz
- Output Power: 220W(max)
- Linear Gain: 20.7dB
- Efficiency: 67%
- Voltage: 50V